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| www.irf.com 1 05/18/06 directfet power mosfet descriptionthe irf6691pbf combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.7 mm profile. thedirectfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6691pbf balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. this part contains an integrated schottky diode to reduce the qrr of the body drain diode further reducing the losses in a synchronous buck circuit. the reduced losses make this product ideal for high frequency/high efficiency dc-dc converters that power high current loads such as the latest generation of micropro- cessors. the irf6691pbf has been optimized for parameters that are critical in synchronous buck converters syncfet sockets. applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate-to-source voltage fig 2. total gate charge vs. gate-to-source voltage directfet isometric rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for cpu core dc-dc converters low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques irf6691pbf irf6691trpbf click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.72mh, r g = 25 ? , i as = 26a. 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 7 8 9 10 t y p i c a l r d s ( o n ) ( m ? ) i d = 32a t j = 25c t j = 125c 0 1 02 03 04 05 06 0 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 17a sq sx st mq mx mt v dss v gs r ds(on) r ds(on) 20v max 12v max 1.2m ? @ 10v 1.8m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 47nc 15nc 4.4nc 26nc 30nc 2.0v ab so l ute m ax i mum r at i ngs parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, vgs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 230 26 180 max. 3226 260 12 20 downloaded from: http:/// 2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 150a. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 12 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 1.8 2.5 m ? CCC 1.2 1.8 v gs(th) gate threshold voltage 1.6 CCC 2.5 v ? v gs(th) / ? t j gate threshold voltage coefficient C C C- 4 . 1C C Cm v / c CCC CCC 1.4 ma i dss drain-to-source leakage current CCC CCC 500 a CCC CCC 5 ma i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 110 CCC CCC s q g total gate charge CCC 47 71 q gs1 pre-vth gate-to-source charge CCC 14 CCC q gs2 post-vth gate-to-source charge CCC 4.4 CCC nc q gd gate-to-drain charge CCC 15 CCC q godr gate charge overdrive CCC 14 CCC see fi g . 14 q sw switch charge (q gs2 + q gd ) CCC 19 CCC q oss output charge CCC 30 CCC nc r g gate resistance CCC 0.60 1.5 ? t d(on) turn-on delay time CCC 23 CCC t r rise time CCC 95 CCC ns t d(off) turn-off delay time CCC 25 CCC t f fall time CCC 10 CCC c iss input capacitance CCC 6580 CCC c oss output capacitance CCC 2070 CCC pf c rss reverse transfer capacitance CCC 840 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 200 (body diode) a i sm pulsed source current CCC CCC 260 ( bod y diode ) v sd diode forward voltage CCC CCC 0.65 v t rr reverse recovery time CCC 32 48 ns q rr reverse recovery charge CCC 26 39 nc i d = 17a v gs = 0v v ds = 10v i d = 26a t j = 25c, i f = 25a di/dt = 100a/s see fig. 17 t j = 25c, i s = 25a, v gs = 0v showing the integral reverse p-n junction diode. i d = 10ma, reference to 25c v ds = v gs , i d = 250a v ds = 16v, v gs = 0v conditions v gs = 0v, i d = 1.0ma reference to 25c, i d = 10ma v gs = 4.5v, i d = 12a v gs = 10v, i d = 15a v ds = 20v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v gs = 12v v gs = -12v v gs = 4.5v mosfet symbol clamped inductive load v ds = 10v, i d = 26a conditions see fig. 15 & 16 ? = 1.0mhz v ds = 10v, v gs = 0v v dd = 16v, v gs = 4.5v v ds = 10v downloaded from: http:/// www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at surface mounted on 1 in. square cu (still air). with small clip heatsink (still air) mounted on minimum footprint full size board withmetalized back and with small clip heatsink (still air) absolute maximum ratin g s p d @t a = 25c power dissipation p d @t a = 70c power dissipation w p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range th erma l r es i stance parameter typ. max. units r ja junction-to-ambient CCC 45 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r jc junction-to-case CCC 1.4 r j-pcb junction-to-pcb mounted 1.0 CCC linear derating factor w/c 0.022 -40 to + 150 2.8 270 1.8 89 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 ri (c/w) i (sec) 0.678 0.00086017.30 0.577560 17.57 8.940000 9.470 106.0000 downloaded from: http:/// 4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 32a v gs = 10v fig 8. typical capacitance vs.drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss downloaded from: http:/// www.irf.com 5 fig10. maximum safe operating area 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 12a 15a bottom 26a fig 12. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a fig 11. maximum drain current vs. case temperature 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 150 175 200 i d , d r a i n c u r r e n t ( a ) fig 9. typical source-drain diode forward voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v downloaded from: http:/// 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14a. gate charge test circuit fig 14b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 15b. unclamped inductive waveforms t p v (br)dss i as fig 15a. unclamped inductive test circuit fig 16b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v downloaded from: http:/// www.irf.com 7 fig 17. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ? ? ? ? ? ! "#"" ? $ % % ? "#"" & # + - + + + - - - directfet board footprint, mt outline (medium size can, t-designation).please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g ddd d ss downloaded from: http:/// 8 www.irf.com directfet part marking directfet outline dimension, mt outline (medium size can, t-designation).please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. max 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.0274 0.0031 0.007 min 6.25 4.80 3.85 0.35 0.78 0.88 1.78 0.98 0.63 0.88 2.46 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.82 0.92 1.82 1.02 0.67 1.01 2.63 0.676 0.080 0.17 min 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003 code a b c d e f g h j k l m r p dimensions metric imperial downloaded from: http:/// www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/06 directfet tape & reel dimension (showing component orientation). standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.7950.504 0.059 3.937 n.c 0.4880.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.cn.c 12.8 n.cn.c 13.5012.01 12.01 min 177.7719.06 13.5 1.5 58.72 n.c 11.911.9 metric max n.cn.c 0.50 n.cn.c 0.53 n.cn.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6691trpbf). for 1000 parts on 7" reel, order IRF6691TR1PBF mi n 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 note: controlling di mensi ons in mm code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n. c 1.60 mi n 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0. 319 0. 161 0. 484 0. 219 0. 209 0. 264 n.c 0. 063 di mensi ons metri c i mperial loaded tape feed di recti on downloaded from: http:/// note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:/// |
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